Answer:
see below for the truth table
Explanation:
<u>Truth Table</u>
As we will see from the description of operation, any input low causes the output to be high. This is the logic of a NAND gate. The truth table is attached.
<u>Working Principle</u>
Pulling any of A, B, or C low will saturate transistor Q1, depriving Q2 of any base current, cutting it off. Then Q5 is also deprived of base current and is cut off. Meanwhile, the current through R2 supplies base current to Q4, allowing it to pull the output high.
If all of A, B, and C are high (or open), base current is supplied to Q2 through the base-collector junction of Q1. Then Q2 saturates, supplying base current to Q3. Diode D1 ensures that the voltage across Q2 will be insufficient to supply any base current to Q4, so it stays cut off.
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Answer:

Explanation:
Given that,
The radius of sphere, r = 0.3 m
Distance from the center of the sphere to the point P, x = 0.5 m
Electric field at point P,
(radially outward)
The maximum electric field is at the surface of the sphere. We know that the electric field is inversely proportional to the distance. So,




So, the magnitude of the electric field due to this sphere is 41666.66 N/C. Hence, this is the required solution.
<u>Given that</u>
mass (m) = 1300 Kg ,
height (h) = 1500 m
Determine the potential energy ?
P.E = m × g × h
= 1300 × 9.81 × 1500
= 19129500 Joules
= 19129.5 KJ
As he lifts the sack to his chest from the floor