Answer : The process is not spontaneous.
Explanation :
As, we know that:
Change in entropy = Change in entropy of system + Change in entropy of surrounding
As we are given in question, the entropy of surroundings decrease by the same amount as the entropy of the system increases.
For the given reaction to be spontaneous, the total change in entropy should be positive.
Given :
Entropy change of system = +125J/K
Entropy change of surroundings = -125J/K
Total change in entropy = Entropy change of system + Entropy change of surroundings
Total change in entropy = 125 J/K + (-125 J/K)
Total change in entropy = 0
The process is at equilibrium because the entropy change is equal to zero. So, the process is not spontaneous.
From the question you will find that:
one capsule of tamiflu is obtained from 2.6 g of star anise.
1 capsule = 2.6 g tamiflu
? capsules = 155 g tamiflu
by cross multiplication =

= 59 capsules
Answer:
Molecular formula → PbSO₄ → Lead sulfate
Option c.
Explanation:
The % percent composition indicates that in 100 g of compound we have:
68.3 g of Pb, 10.6 g of S and (100 - 68.3 - 10.6) = 21.1 g of O
We divide each element by the molar mass:
68.3 g Pb / 207.2 g/mol = 0.329 moles Pb
10.6 g S / 32.06 g/mol = 0.331 moles S
21.1 g O / 16 g/mol = 1.32 moles O
We divide each mol by the lowest value to determine, the molecular formula
0.329 / 0.329 = 1 Pb
0.331 / 0.329 = 1 S
1.32 / 0.329 = 4 O
Molecular formula → PbSO₄ → Lead sulfate
MgBr2, 3 ions per mole=best conductor
KBr, 2 ions per mole, 2nd best conductor
Benzoic acid, weak acid, slightly ionized, weak conductor
Sugar, molecular, non ionized, non conductor
Answer:
- 0.0249% Sb/cm

Explanation:
Given that:
One surface contains 1 Sb atom per 10⁸ Si atoms and the other surface contains 500 Sb atoms per 10⁸ Si atoms.
The concentration gradient in atomic percent (%) Sb per cm can be calculated as follows:
The difference in concentration = 
The distance
= 0.2-mm = 0.02 cm
Now, the concentration of silicon at one surface containing 1 Sb atom per 10⁸ silicon atoms and at the outer surface that has 500 Sb atom per 10⁸ silicon atoms can be calculated as follows:

= - 0.0249% Sb/cm
b) The concentration
of Sb in atom/cm³ for the surface of 1 Sb atoms can be calculated by using the formula:

Lattice parameter = 5.4307 Å; To cm ; we have
= 

= 
The concentration
of Sb in atom/cm³ for the surface of 500 Sb can be calculated as follows:

= 
= 
Finally, to calculate the concentration gradient


