Answer:
Doping with galium or indium will yield a p-type semiconductor while doping with arsenic, antimony or phosphorus will yield an n-type semiconductor.
Explanation:
Doping refers to improving the conductivity of a semiconductor by addition of impurities. A trivalent impurity leads to p-type semiconductor while a pentavalent impurity leads to an n-type semiconductor.
If it is heated while it is being compressed or held inside a container as such, the pressure build up while in the container and the pressure can become so much that the container will burst.
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While I am not the brainliest I can certainly answer.
This was a chemical change because the chemical components were changed, a big giveaway to this was the fizzing, however the temperature rising was also another giveaway.