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gregori [183]
1 year ago
10

Germanium is a group 4A semiconductor. The addition of a dopant atom (group 3A element) that has fewer valence electrons than th

e host atom results in a p-type semiconductor. The addition of a dopant atom (group 5A elements) that has more valence electrons than the host atom results in an n-type semiconductor. Which of the following elements when used for doping germanium will yield p-type semiconductors, and which elements when used for doping germanium will yield n-type semiconductors?
Chemistry
1 answer:
klasskru [66]1 year ago
7 0

Answer:

Doping with galium or indium will yield a p-type semiconductor while doping with arsenic, antimony or phosphorus will yield an n-type semiconductor.

Explanation:

Doping refers to improving the conductivity of a semiconductor by addition of impurities. A trivalent impurity leads to p-type semiconductor while a pentavalent impurity leads to an n-type semiconductor.

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abruzzese [7]

Answer:

see explanation below

Explanation:

To do this exercise, we need to use the following expression:

P = nRT/V

This is the equation for an ideal gas. so, we have the temperature of 22 °C, R is the gas constant which is 0.082 L atm / mol K, V is the volume in this case, 5 L, and n is the moles, which we do not have, but we can calculate it.

For the case of the oxygen (AW = 16 g/mol):

n = 30.6 / 32 = 0.956 moles

For the case of helium (AW = 4 g/mol)_

n = 15.2 / 4 = 3.8 moles

Now that we have the moles, let's calculate the pressures:

P1 = 0.956 * 0.082 * 295 / 5

P1 = 4.63 atm

P2 = 3.8 * 0.082 * 295 / 5

P2 = 18.38 atm

Finally the total pressure:

Pt = 4.63 + 18.38

Pt = 23.01 atm

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